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ID 21461
file
creator
Tsubota, M.
Iga, Fumitoshi
NDC
Physics
abstract
We performed optical-pump terahertz-probe measurements of a Mott insulator YTiO3 and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond-pulse laser (1.55 eV). Both samples possess long energy-relaxation times (1.5 ms for YTiO3 and 15 mu s for Si); therefore, it is possible to extract terahertz complex conductivities of photoinduced carriers under equilibrium. We observed highly contrasting behaviour-Drude conductivity in Si and localized conductivity possibly obeying the Jonscher law in YTiO3. The carrier number at the highest carrier-concentration layer in YTiO3 is estimated to be 0.015 per Ti site. Anisotropic conductivity of YTiO3 is determined. Our study indicates that localized carriers might play an important role in the incipient formation of photoinduced metallic phases in Mott insulators. In addition, this study shows that the transfer-matrix method is effective for extracting an optical constant of a sample with a spatially inhomogeneous carrier distribution.
journal title
Journal of Physics-Condensed Matter
volume
Volume 19
issue
Issue 40
start page
406224
date of issued
2007-10
publisher
IOP Publishing Ltd
issn
0953-8984
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
author
rights
Copyright(c) 2007 IOP Publishing Ltd
relation is version of URL
http://dx.doi.org/10.1088/0953-8984/19/40/406224
department
Graduate School of Advanced Sciences of Matter