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ID 21477
file
creator
Tada, Yosuke
Kunai, Atsutaka
Kohno, Atsushi
Kunugi, Yoshihito
subject
Annealing
EL device
Hole-transport
Interface
Polythiophene
Regio-regularity
X-ray reflectivity
NDC
Chemistry
abstract
Double layer devices with a structure of ITO/pHT/Alq3/Mg-Ag (ITO = indium tin oxide, pHT = regio-regular or random poly(3-hexylthiophene), Alq3 = tris(8-hydroxyquinoline)aluminium) were fabricated. The device with a random pHT film emitted a green-yellow light in all voltage region, while that having a regio-regular pHT film exhibited a color change from green to red by applying the bias voltage higher than 15 V. Annealing the pHT films prepared on ITO at 200 °C for 1 h in nitrogen, prior to vapor-deposition of the Alq3 layer, improved the device performance with lowering the onset bias voltage by 2-3 V. The EL colors and spectra were also affected by annealing. X-ray reflectivity measurements before and after annealing the pHT film on ITO indicated increased density of the pHT layer and structural changes in the pHT/ITO interface by annealing, which seems to be responsible for the improved EL device performance
journal title
Synthetic Metals
volume
Volume 157
issue
Issue 2-3
start page
104
end page
108
date of issued
2007
publisher
Elsevier Science SA
issn
0379-6779
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
author
rights
Copyright(c) 2007 Elsevier Science SA
relation is version of URL
http://dx.doi.org/10.1016/j.synthmet.2006.12.009
department
Graduate School of Engineering