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ID 21034
file
title alternative
A Non-Quasi-Static Model for MOSFET Based on Carrier-Transit Delay
creator
Nakayama, Noriaki
NDC
Electrical engineering
language
jpn
nii type
Thesis or Dissertation
HU type
Doctoral Theses
DCMI type
text
format
application/pdf
rights
Copyright(c) by Author
relation references
(1) "A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response" N. Nakayama, H. Ueno, T. Inoue, T. Isa, M. Tanaka and M. Miura-Mattausch, Japanese Journal of Applied Physics Vol. 42, Part 1, No. 4B, April 2003 pp. 2132-2136.
relation references URL
http://dx.doi.org/10.1143/JJAP.42.2132
grantid
甲第3067号
degreeGrantor
広島大学(Hiroshima University)
degreename Ja
博士(工学)
degreename En
Engineering
degreelevel
doctoral
date of granted
2003-09-05
department
Graduate School of Advanced Sciences of Matter