このエントリーをはてなブックマークに追加
ID 18585
file
creator
Ohba, Kenji
abstract
Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.
journal title
Applied Physics Letters
volume
Volume 79
issue
Issue 5
start page
617
end page
619
date of issued
2001-07-30
publisher
American Institute of Physics
issn
0003-6951
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2001 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems