Nakajima, Anri - HU author list - Hiroshima University Institutional Repository

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Atomic layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability

creator	Nakajima, Anri; Ohashi, Takuo; Zhu, Shiyang; Yokoyama, Shigeyuki; Michimata, Shigetomi; Miyake, Hideharu;
journal title	IEEE Electron Device Letters
volume	Volume 26
issue	Issue 8
date of issued	2005-08

Enhancement of BTI degradation in pMOSFETs under high-frequency bipolar gate bias

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	IEEE Electron Device Letters
volume	Volume 26
issue	Issue 6
date of issued	2005-06

Interface trap generation induced by charge pumping current under dynamic oxide field stresses

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	IEEE Electron Device Letters
volume	Volume 26
issue	Issue 3
date of issued	2005-03

Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

creator	Nakajima, Anri; Kudo, Takashi; Ito, Takashi;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 5
date of issued	2011

Highly sensitive ion detection using Si single-electron transistors

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 12
date of issued	2011

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 100
issue	Issue 2
date of issued	2012

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