Nakajima, Anri - HU author list - Hiroshima University Institutional Repository

ID (asc)

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	Journal of Applied Physics
volume	Volume 98
issue	Issue 11
date of issued	2005-12-01

Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

creator	Ohkura, Kensaku; Kitade, Tetsuya; Nakajima, Anri;
journal title	Journal of Applied Physics
volume	Volume 98
issue	Issue 12
date of issued	2005-12-15

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	Journal of Applied Physics
volume	Volume 99
issue	Issue 6
date of issued	2006-05-15

Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

creator	Nakajima, Anri; Kudo, Takashi; Ito, Takashi;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 5
date of issued	2011

Highly sensitive ion detection using Si single-electron transistors

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 12
date of issued	2011

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 100
issue	Issue 2
date of issued	2012

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