Cotunneling current in Si single-electron transistor based on multiple islands
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00018599
ID | 18599 |
file | |
creator |
Ohkura, Kensaku
Kitade, Tetsuya
|
abstract | The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
|
journal title |
Applied Physics Letters
|
volume | Volume 89
|
issue | Issue 18
|
date of issued | 2006-10-30
|
publisher | American Institute of Physics
|
issn | 0003-6951
|
ncid | |
publisher doi | |
language |
eng
|
nii type |
Journal Article
|
HU type |
Journal Articles
|
DCMI type | text
|
format | application/pdf
|
text version | publisher
|
rights | Copyright (c) 2006 American Institute of Physics.
|
relation url | |
department |
Research Center for Nanodevices and Systems
|