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ID 18589
file
creator
Khosru, Quazi Deen Mohd
Yoshimoto, Takashi
abstract
A simple and effective method for the extraction of interface trap distribution in ultrathin metal– oxide–semiconductor (MOS) structures is presented. By a critical analysis of bipolar-pulse-induced currents through MOS capacitors, a technique is developed to determine the energy distribution of the interface traps without requiring the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be efficiently used to probe electrical stress, hot-carrier, and radiation-induced interfacial degradations in ultrathin MOS structures.
journal title
Applied Physics Letters
volume
Volume 80
issue
Issue 21
start page
3952
end page
3954
date of issued
2002-05-27
publisher
American Institute of Physics
issn
0003-6951
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2002 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems