Three-dimensional band mapping by angle-dependent very-low-energy electron diffraction and photoemission : Methodology and application to Cu
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00019371
ID | 19371 |
file | |
creator |
Strocov, Vladimir N.
Claessen, Ralph
Nicolay, Georg
Hüfner, Stefan
Harasawa, Ayumi
Shin, Shik
Kakizaki, Akito
Starnberg, H. I.
Nilsson, P. O.
Blaha, Peter
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abstract | A method of band mapping providing full control of the three-dimensional k is described in detail. Angle-dependent very-low-energy electron diffraction is applied to determine the photoemission final states along a Brillouin zone symmetry line parallel to the surface; photoemission out of these states is then utilized to map the valence bands in the constant-final-state mode. The method naturally incorporates the non-free-electron and excited-state self-energy effects in the unoccupied band, resulting in an accuracy superior over conventional techniques. Moreover, its intrinsic accuracy is less limited by lifetime broadening. As a practical advantage, the method provides access to a variety of lines in the Brillouin zone using only one crystal surface. We extensively tested the method on Cu. Several new aspects of the electronic structure of this metal are determined, including non-free-electron behavior of unoccupied bands and missing pieces of the valence band.
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journal title |
Physical Review B - Condensed Matter and Materials Physics
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volume | Volume 63
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issue | Issue 20
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start page | 205108-1
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end page | 205108-16
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date of issued | 2001-04-27
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publisher | American Physical Society
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issn | 0163-1829
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 2001 The American Physical Society.
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relation url | |
department |
Graduate School of Science
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