Hole-injection properties of annealed polythiophene films to replace PEDOT-PSS in multilayered OLED systems
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00027704
ID | 27704 |
file | |
creator |
Tada, Yosuke
Kunai, Atsutaka
Kunugi, Yoshihito
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subject | Polythiophene; Hole-injection; OLED; Annealing
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NDC |
Metal and mining engineering
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abstract | Hole-injection properties of annealed poly(alkoxy- and alkylthiophene) films in OLEDs were studied. Among them, annealed poly(3,3'-dihexyloxy-2,2'-bithiophene) (aPHOBT) film exhibited good hole-injection properties and a triple-layered OLED with the structure ITO/aPHOBT/PVK/Alq3/Mg-Ag (device I) showed much higher performance than a double-layered device without the aPHOBT layer (device II, ITO/PVK/Alq3/Mg-Ag). Device I was slightly inferior to a device having a PEDOT-PSS layeras the hole injector (device III, ITO/PEDOT- PSS/PVK/Alq3/Mg-Ag) in the low-intermediate region of the applied voltage (6-11 V), but gave comparable luminance to III when the applied voltage exceeded 11 V.
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journal title |
Synthetic Metals
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volume | Volume 159
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issue | Issue 3-4
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start page | 214
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end page | 217
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date of issued | 2009
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publisher | Elsevier Science SA
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issn | 0379-6779
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | author
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rights | Copyright (c) 2008 Elsevier B.V.
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relation url | |
department |
Graduate School of Engineering
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