Effects of annealing of poly(3-hexylthiophene) film on the performance of double-layered EL devices of ITO/polymer/Alq3/Mg-Ag
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00021477
ID | 21477 |
file | |
creator |
Tada, Yosuke
Kunai, Atsutaka
Kohno, Atsushi
Kunugi, Yoshihito
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subject | Annealing
EL device
Hole-transport
Interface
Polythiophene
Regio-regularity
X-ray reflectivity
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NDC |
Chemistry
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abstract | Double layer devices with a structure of ITO/pHT/Alq3/Mg-Ag (ITO = indium tin oxide, pHT = regio-regular or random poly(3-hexylthiophene), Alq3 = tris(8-hydroxyquinoline)aluminium) were fabricated. The device with a random pHT film emitted a green-yellow light in all voltage region, while that having a regio-regular pHT film exhibited a color change from green to red by applying the bias voltage higher than 15 V. Annealing the pHT films prepared on ITO at 200 °C for 1 h in nitrogen, prior to vapor-deposition of the Alq3 layer, improved the device performance with lowering the onset bias voltage by 2-3 V. The EL colors and spectra were also affected by annealing. X-ray reflectivity measurements before and after annealing the pHT film on ITO indicated increased density of the pHT layer and structural changes in the pHT/ITO interface by annealing, which seems to be responsible for the improved EL device performance
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journal title |
Synthetic Metals
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volume | Volume 157
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issue | Issue 2-3
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start page | 104
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end page | 108
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date of issued | 2007
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publisher | Elsevier Science SA
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issn | 0379-6779
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | author
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rights | Copyright(c) 2007 Elsevier Science SA
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relation is version of URL | http://dx.doi.org/10.1016/j.synthmet.2006.12.009
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department |
Graduate School of Engineering
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