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ID 15052
file
creator
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
subject
Charge pumping
nterface traps
MOSFET
Reliability
NDC
Electrical engineering
abstract
Stress-induced interface trap generation (ΔNit) in the mid-channel region of standard n-channel MOSFETs with ultrathin plasma-nitrided SiO2 films (2.34 and 3.48 nm) were systematically studied under static and dynamic (both bipolar and unipolar) oxide field stresses over a wide frequency range from 1 to 10[7] Hz using a direct-current current-voltage measurement. At the bipolar stresses, ΔNit increases with the stress frequency significantly when the frequency is larger than ∼104 Hz while it saturates or decreases at the frequency larger than ∼107 Hz. The frequency dependence of the ΔNit enhancement can be attributed to a charge pumping current during the dynamic stress. Nitrogen incorporation increases not only ΔNit, but also the frequency dependence.
journal title
IEEE Electron Device Letters
volume
Volume 26
issue
Issue 3
start page
216
end page
218
date of issued
2005-03
publisher
IEEE
issn
0741-3106
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
relation url
department
Research Center for Nanodevices and Systems