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ID 15050
file
creator
Ohashi, Takuo
Zhu, Shiyang
Yokoyama, Shigeyuki
Michimata, Shigetomi
Miyake, Hideharu
subject
Atomic layer deposition (ALD)
DRAM
MOSFET
Si nitride
Stack gate dielectrics
NDC
Electrical engineering
abstract
Atomic layer-deposited (ALD) Si-nitride/SiO"2 stack gate dielectrics were applied to high-performance transistors for future scaled DRAMs. The stack gate dielectrics of the peripheral pMOS transistors excellently suppress boron penetration. ALD stack gate dielectrics exhibit only slightly worse negative-bias temperature instability (NBTI) characteristics than pure gate oxide. Enhanced reliability in NBTI was achieved compared with that of plasma-nitrided gate SiO"2. Memory-cell (MC) nMOS transistors with ALD stack gate dielectrics show slightly smaller junction leakage than those with plasma-nitrided gate SiO"2 in a high-drain-voltage region, and have identical junction leakage characteristics to transistors with pure gate oxide. MCs having transistors with ALD stack gate dielectrics and those with pure gate oxide have the identical retention-time distribution. Taking the identical hole mobility for the transistors with ALD stack gate dielectrics to that for the transistors with pure gate oxide both before and after hot carrier injection (previously reported) into account, the ALD stack dielectrics are a promising candidate for the gate dielectrics of future high-speed, reliable DRAMs.
journal title
IEEE Electron Device Letters
volume
Volume 26
issue
Issue 8
start page
538
end page
540
date of issued
2005-08
publisher
IEEE
issn
0741-3106
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
relation url
department
Research Center for Nanodevices and Systems