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ID 18601
file
creator
Ohkura, Kensaku
Kitade, Tetsuya
abstract
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined islands. The conduction mechanism was systematically investigated in the temperature range from 4.2 K to 100 K. Despite their island size variation, some of the SETs showed clear periodic and quasiperiodic Coulomb oscillations. This is in contrast to the conventional idea that only geometrically uniform islands show periodic Coulomb oscillations. We showed theoretically that periodic Coulomb oscillation appears under the small deviation of gate capacitances with the period determined by the average of the capacitances. We also found that the formed charge soliton that was conducted through the islands was spread over the whole array. This may also contribute to the periodicity of the Coulomb oscillation. The SET with multiple islands was applied to an Exclusive-OR circuit and achieved a room temperature operation.
journal title
Journal of Applied Physics
volume
Volume 98
issue
Issue 12
date of issued
2005-12-15
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2005 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems