Cotunneling current in Si single-electron transistor based on multiple islands
ApplPhysLett_89_183520.pdf 193 KB
The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
Applied Physics Letters
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American Institute of Physics
Copyright (c) 2006 American Institute of Physics.
Research Center for Nanodevices and Systems