Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00018595
ID | 18595 |
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creator |
Hansch, Walter
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abstract | Core-level intensities for Si 2p, Si2s, O1s, and N1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication.
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journal title |
Applied Physics Letters
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volume | Volume 75
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issue | Issue 11
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start page | 1535
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end page | 1537
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date of issued | 1999-09-13
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publisher | American Institute of Physics
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issn | 0003-6951
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 1999 American Institute of Physics.
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relation url | |
department |
Research Center for Nanodevices and Systems
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