Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00018589
ID | 18589 |
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creator |
Khosru, Quazi Deen Mohd
Yoshimoto, Takashi
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abstract | A simple and effective method for the extraction of interface trap distribution in ultrathin metal– oxide–semiconductor (MOS) structures is presented. By a critical analysis of bipolar-pulse-induced currents through MOS capacitors, a technique is developed to determine the energy distribution of the interface traps without requiring the knowledge of surface potential and doping profile in the semiconductor. The proposed technique can be efficiently used to probe electrical stress, hot-carrier, and radiation-induced interfacial degradations in ultrathin MOS structures.
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journal title |
Applied Physics Letters
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volume | Volume 80
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issue | Issue 21
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start page | 3952
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end page | 3954
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date of issued | 2002-05-27
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publisher | American Institute of Physics
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issn | 0003-6951
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 2002 American Institute of Physics.
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relation url | |
department |
Research Center for Nanodevices and Systems
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