Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00018585
ID | 18585 |
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creator |
Ohba, Kenji
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abstract | Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.
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journal title |
Applied Physics Letters
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volume | Volume 79
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issue | Issue 5
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start page | 617
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end page | 619
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date of issued | 2001-07-30
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publisher | American Institute of Physics
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issn | 0003-6951
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 2001 American Institute of Physics.
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relation url | |
department |
Research Center for Nanodevices and Systems
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