Nakajima, Anri - HU author list - Hiroshima University Institutional Repository

ID (desc)

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 100
issue	Issue 2
date of issued	2012

Highly sensitive ion detection using Si single-electron transistors

creator	Kudo, Takashi; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 12
date of issued	2011

Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

creator	Nakajima, Anri; Kudo, Takashi; Ito, Takashi;
journal title	Applied Physics Letters
volume	Volume 98
issue	Issue 5
date of issued	2011

Influence of bulk bias on negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	Journal of Applied Physics
volume	Volume 99
issue	Issue 6
date of issued	2006-05-15

Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

creator	Ohkura, Kensaku; Kitade, Tetsuya; Nakajima, Anri;
journal title	Journal of Applied Physics
volume	Volume 98
issue	Issue 12
date of issued	2005-12-15

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

creator	Zhu, Shiyang; Nakajima, Anri; Ohashi, Takuo; Miyake, Hideharu;
journal title	Journal of Applied Physics
volume	Volume 98
issue	Issue 11
date of issued	2005-12-01

Cotunneling current in Si single-electron transistor based on multiple islands

creator	Ohkura, Kensaku; Kitade, Tetsuya; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 89
issue	Issue 18
date of issued	2006-10-30

Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

creator	Kitade, Tetsuya; Ohkura, Kensaku; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 86
issue	Issue 12
date of issued	2005-05-21

Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

creator	Zhu, Shiyang; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 86
issue	Issue 8
date of issued	2005-02-21

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

creator	Nakajima, Anri; Yoshimoto, Takashi; Kidera, Toshiro; Obata, Katsunori; Yokoyama, Shin; Sunami, Hideo; Hirose, Masataka;
journal title	Applied Physics Letters
volume	Volume 77
issue	Issue 18
date of issued	2000-10-30

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

creator	Hansch, Walter; Nakajima, Anri; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 75
issue	Issue 11
date of issued	1999-09-13

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

creator	Ishii, Hiroyuki; Nakajima, Anri; Yokoyama, Shin;
journal title	Journal of Applied Physics
volume	Volume 95
issue	Issue 2
date of issued	2004-01-15

Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

creator	Kawamura, Kensaku; Kidera, Toshiro; Nakajima, Anri; Yokoyama, Shin;
journal title	Journal of Applied Physics
volume	Volume 91
issue	Issue 8
date of issued	2002-04-15

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

creator	Nakajima, Anri; Ito, Yuhei; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 81
issue	Issue 4
date of issued	2002-07-22

Fabrication of Si single-electron transistors having double SiO2 barriers

creator	Ito, Yuhei; Hatano, Tsuyoshi; Nakajima, Anri; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 24
date of issued	2002-06-17

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

creator	Khosru, Quazi Deen Mohd; Nakajima, Anri; Yoshimoto, Takashi; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 21
date of issued	2002-05-27

NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

creator	Nakajima, Anri; Khosru, Quazi Deen Mohd; Yoshimoto, Takashi; Kidera, Toshirou; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 7
date of issued	2002-02-18

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

creator	Khosru, Quazi Deen Mohd; Nakajima, Anri; Yoshimoto, Takashi; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 21
date of issued	2001-11-19

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

creator	Nakajima, Anri; Yoshimoto, Takashi; Kidera, Toshirou; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 5
date of issued	2001-07-30

Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4

creator	Yokoyama, Shin; Ohba, Kenji; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 5
date of issued	2001-07-30

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