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ID 18612
file
creator
Haverkort, M.W.
Hu, Z.
Reichelt, W.
Streltsov, S.V.
Korotin, M.A.
Anisimov, V.I.
Hsieh, H.H.
Lin, H.-J.
Chen, C.T.
Khomskii, D.I.
Tjeng, L.H.
abstract
We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.
journal title
Physical Review Letters
volume
Volume 95
issue
Issue 19
date of issued
2005-11-04
publisher
American Physical Society
issn
0031-9007
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2005 American Physical Society.
relation url
department
Graduate School of Advanced Sciences of Matter