Bonding state of the C60 molecule adsorbed on a Si(111)-(7X7) surface
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00019357
ID | 19357 |
file | |
creator |
Sakamoto, Kazuyuki
Harada, Masashi
Kondo, Daiyu
Kakizaki, Akito
Suto, Shozo
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abstract | We report here the measurements of the valence spectra, the C 1s and the Si 2p core-level spectra of C60 molecules adsorbed on a Si(111)-(7X7) surface, using photoelectron spectroscopy. In the valence spectra, the highest occupied molecular orbital (HOMO) of a C60 splits into two peaks at a coverage lower than 0.25 ML. The binding energies of the split peaks are 1.8 and 2.4 eV. Taking into account the polarization-dependence of the valence spectra and the binding energy of the C 1s core-level spectra, it is found that the 2.4-eV peak observed in the valence spectra is the covalent bonding state between a C60 molecule and the Si substrate, and that the 1.8-eV peak is the shifted HOMO. The Si 2p core-level spectra suggest that the bonding site is localized at the interface. We also present the energy-level scheme of the bonding state in terms of the symmetry of the HOMO.
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journal title |
Physical Review B - Condensed Matter and Materials Physics
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volume | Volume 58
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issue | Issue 20
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start page | 13951
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end page | 13956
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date of issued | 1998-11-15
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publisher | American Physical Society
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issn | 0163-1829
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 1998 The American Physical Society.
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relation url | |
department |
Graduate School of Science
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