Angle-resolved photoemission study of Ga1-xMnxAs
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00019355
ID | 19355 |
file | |
creator |
Okabayashi, Jun
Rader, Oliver
Mizokawa, Takashi
Fujimori, Atsushi
Hayashi, Toshiaki
Tanaka, Masaaki
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abstract | Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k?[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
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journal title |
Physical Review B - Condensed Matter and Materials Physics
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volume | Volume 64
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issue | Issue 12
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start page | 125304-1
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end page | 125304-4
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date of issued | 2001-09-06
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publisher | American Physical Society
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issn | 0163-1829
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 2001 The American Physical Society.
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relation url | |
department |
Graduate School of Science
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