Angle-resolved photoemission study of Ga1-xMnxAs
Use this link to cite this item : http://ir.lib.hiroshima-u.ac.jp/00019355
| ID | 19355 |
| file | |
| creator |
Okabayashi, Jun
Rader, Oliver
Mizokawa, Takashi
Fujimori, Atsushi
Hayashi, Toshiaki
Tanaka, Masaaki
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| abstract | Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k?[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
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| journal title |
Physical Review B - Condensed Matter and Materials Physics
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| volume | Volume 64
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| issue | Issue 12
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| start page | 125304-1
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| end page | 125304-4
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| date of issued | 2001-09-06
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| publisher | American Physical Society
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| issn | 0163-1829
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| ncid | |
| publisher doi | |
| language |
eng
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| nii type |
Journal Article
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| HU type |
Journal Articles
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| DCMI type | text
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| format | application/pdf
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| text version | publisher
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| rights | Copyright (c) 2001 The American Physical Society.
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| relation url | |
| department |
Graduate School of Science
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