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ID 49457
file
k8160_1.pdf 241 KB
k8160_2.pdf 218 KB
k8160_3.pdf 12.9 MB
title alternative
極限環境エレクトロニクス実現に向けた界面ケイ酸塩層を有する高移動度SiCMOSFETsの研究
creator
Muraoka, Kousuke
language
eng
nii type
Thesis or Dissertation
HU type
Doctoral Theses
DCMI type
text
format
application/pdf
grantid
甲第8160号
degreeGrantor
広島大学(Hiroshima University)
degreename Ja
博士(工学)
degreename En
Doctor of Engineering
degreelevel
doctoral
date of granted
2020-03-23
department
Graduate School of Advanced Sciences of Matter



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