Effects of Si substitution and uniaxial pressure on the unusual antiferromagnetic order in the Kondo semiconductors CeT2Al10 (T = Ru and Os)
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00046118
| ID | 46118 |
| file | |
| title alternative | 近藤半導体CeT2Al10 (T = Ru, Os)の特異な反強磁性秩序に対するSi置換と一軸圧力の効果
|
| creator |
Hayashi, Kyosuke
|
| language |
eng
|
| nii type |
Thesis or Dissertation
|
| HU type |
Doctoral Theses
|
| DCMI type | text
|
| format | application/pdf
|
| text version | ETD
|
| grantid | 甲第7535号
|
| degreeGrantor | 広島大学(Hiroshima University)
|
| degreename Ja | 博士(理学)
|
| degreename En | Doctor of Science
|
| degreelevel | doctoral
|
| date of granted | 2018-03-23
|
| department |
Graduate School of Advanced Sciences of Matter
|
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