Compact Modeling of Gallium-Nitride-based High Electron Mobility Transistor for High-Power Circuit Applications
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00043616
| ID | 43616 |
| file | |
| title alternative | 高電力用途における窒化ガリウム高電子移動度トランジスタのコンパクトモデル
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| creator |
Mizoguchi, Takeshi
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| NDC |
Physics
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| language |
eng
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| nii type |
Thesis or Dissertation
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| HU type |
Doctoral Theses
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| DCMI type | text
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| format | application/pdf
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| text version | ETD
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| relation references | Analysis of GaN High Electron Mobility Transistor Switching Characteristics for High-Power Applications with HiSIM-GaN Compact Model; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans JUrgen Mattausch; Japanese Journal of Applied Physics, Vol. 55, 04EG03-1-5, (2016).
Modeling of Field-Plate Effect on Gallium-Nitride-based High Electron Mobility Transistors for High-Power Applications; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans Jurgen Mattausch; The Institute of Electronics, Information and Communication Engineers Transactions on Electronics, Vol. E100-C, No. 3, pp. 321-328, (2017).
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| relation references URL | https://doi.org/10.7567/JJAP.55.04EG03
https://doi.org/10.1587/transele.E100.C.321
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| grantid | 甲第7236号
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| degreeGrantor | 広島大学(Hiroshima University)
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| degreename Ja | 博士(工学)
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| degreename En | Doctor of Engineering
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| degreelevel | doctoral
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| date of granted | 2017-03-23
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| department |
Graduate School of Advanced Sciences of Matter
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