Tunneling Evidence for the Quasiparticle Gap in Kondo Semiconductors CeNiSn and CeRhSb
PhysRevLett_75_4262.pdf 784 KB
The Kondo semiconductors CeNiSn and CeRhSb were investigated by tunneling spectroscopy using a break junction. The differential conductances at 2-4 K show energy gaps of 8-10 and 20-27 meV for CeNiSn and CeRhSb, respectively, which are comparable to the Kondo temperatures. The tunneling spectra give clear evidence for a strong gap anisotropy. With increasing temperature, the zero-bias conductance displays a crossover from a well-developed gap state to a partial-gap state, and to a Kondo-metallic state.
Physical Review Letters
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American Physical Society
Copyright (c) 1995 The American Physical Society.
Graduate School of Advanced Sciences of Matter
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