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ID 19269
file
creator
Hwang, Jong-Il
Osafune, Yoshitaka
Kobayashi, Masaki
Ebata, Kazuaki
Ooki, Yasuhiro
Ishida, Yukiaki
Fujimori, Atsushi
Takeda, Yukiharu
Okane, Tetsuo
Saitoh, Yuji
Kobayashi, Keisuke
abstract
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼70 Å) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements were close to that of Ga1-x Mnx N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements at the Mn L edge, it was revealed that the doped Mn ions were in the divalent Mn2+ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using p -type GaN substrates while samples using n -type GaN substrates showed only paramagnetism.
journal title
Journal of Applied Physics
volume
Volume 101
issue
Issue 10
start page
103709-1
end page
103709-6
date of issued
2007-05-22
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2007 American Institute of Physics.
relation url
department
Graduate School of Advanced Sciences of Matter



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