Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
ApplPhysLett_86_123118.pdf 145 KB
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.
Applied Physics Letters
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American Institute of Physics
Copyright (c) 2005 American Institute of Physics.
Research Center for Nanodevices and Systems
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