Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
ApplPhysLett_86_083501.pdf 69.5 KB
By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon.
Applied Physics Letters
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American Institute of Physics
Copyright (c) 2005 American Institute of Physics.
Research Center for Nanodevices and Systems
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