Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires
JApplPhys_91_5213.pdf 503 KB
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ~5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ~26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties.
Journal of Applied Physics
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American Institute of Physics
Copyright (c) 2002 American Institute of Physics.
Research Center for Nanodevices and Systems
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