NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability
ApplPhysLett_80_1252.pdf 116 KB
Khosru, Quazi Deen Mohd
Extremely thin (equivalent oxide thickness, Teq = 1.2 nm) silicon-nitride high-k (er = 7.2) gate dielectrics have been formed at low temperatures (<550 °C) by an atomic-layer-deposition (ALD) technique with subsequent NH3 annealing at 550 °C. A remarkable reduction in leakage current, especially in the low dielectric voltage region, which will be the operating voltage for future technologies, has made it a highly potential gate dielectric for future ultralarge-scale integrated devices. Suppressed soft breakdown events are observed in ramped voltage stressing. This suppression is thought to be due to a strengthened structure of Si–N bonds and the smoothness and uniformity at the poly-Si/ALD-silicon-nitride interface.
Applied Physics Letters
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American Institute of Physics
Copyright (c) 2002 American Institute of Physics.
Research Center for Nanodevices and Systems
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