Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4
ApplPhysLett_79_617.pdf 103 KB
Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.
Applied Physics Letters
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American Institute of Physics
Copyright (c) 2001 American Institute of Physics.
Research Center for Nanodevices and Systems
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