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ID 17077
本文ファイル
著者
Eto, Takanori
Kurobe, Ken-ichi
キーワード
CMOS
excimer laser
krypton flouride (KrF)
laser annealing (LA)
shallow junction
NDC
電気工学
抄録(英)
In this paper, the potential for sub-10-nm junction formation of partial-melt laser annealing (PMLA), which is a combination of solid-phase regrowth and heat-assisted laser annealing (HALA), is demonstrated. HALA and PMLA are effective for reducing laser-energy density for dopant activation and for improving heating uniformity of device structure. The absence of melting at the dopant profile tail for PMLA results in a egligibly small diffusion at this region. A high activation rate is achievableby melting the upper part of the amorphous-silicon layer. The obtained sheet resistance of 10-nm-deep junctions was about 700 Ω/sq. for both n+/p and p+/n junctions. These results imply that PMLA is applicable for much shallower junction formation.
掲載誌名
IEEE Transactions on Electron Devices
53巻
5号
開始ページ
1059
終了ページ
1064
出版年月日
2006-05
出版者
IEEE
ISSN
0018-9383
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
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関連情報URL
部局名
ナノデバイス・システム研究センター