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ID 15049
本文ファイル
著者
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
キーワード
Bias temperature instability (BTI)
Dynamic stress
Interface trap generation
pMOSFET
Pulse waveform
NDC
電気工学
抄録(英)
In this letter, the waveform effects on the degradation enhancement of pMOSFETs under high-frequency (≥ 10[4] Hz) bipolar-pulsed bias-temperature (BT) stresses were systematically studied. The enhancement was found to be mainly governed by the fall time (tF) of the pulse waveform, namely, the transition time of the silicon surface potential from strong accumulation to strong inversion, rather than the pulse rise time (tR) and the pulse duty factor (D). The enhancement decreases significantly with tF increasing, and is almost eliminated when tF is larger than ∼60 ns. This new finding is consistent with our newly proposed assumption that the recombination of free holes and trapped electrons at the SiO2/Si interface and/or near-interface states can enhance the interface trap generation.
掲載誌名
IEEE Electron Device Letters
26巻
9号
開始ページ
658
終了ページ
660
出版年月日
2005-09
出版者
IEEE
ISSN
0741-3106
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
関連情報URL
部局名
ナノデバイス・システム研究センター