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ID 34090
本文ファイル
著者
Kudo, Takashi
NDC
電気工学
抄録(英)
Si single-electron transistors (SETs) were used for highly sensitive ion detection. A multiple-island channel structure was adapted in the SET for room-temperature operation. Clear Coulomb oscillation and diamonds were observed at room temperature. Using the Coulomb oscillation, clear pH responses of drain current (Id)-gate voltage (Vg) characteristics were obtained despite the existence of Id noise. Because Coulomb oscillations have a possibility to increase the slope of Id over Vg near the half-maximum current of the peaks, high resolving power of ion, and/or biomolecule concentration can be expected. A Si-structure will make it possible to integrate the sensors on a single chip.
掲載誌名
Applied Physics Letters
98巻
12号
開始ページ
123705
出版年月日
2011
出版者
American Institute of Physics
ISSN
0003-6951
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
(c) 2011 American Institute of Physics
関連情報URL
部局名
ナノデバイス・システム研究センター