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ID 29246
本文ファイル
著者
Hirata, Tomoki
Kajikawa, Kenta
Sunami, Hideo
NDC
物理学
抄録(英)
Light propagation in a metal-oxide-semiconductor optical modulator based on free carrier absorption is analyzed theoretically. The analysis is based on Marcatili's approximation taking account of absorption by free carriers in the inversion layer The gate voltage and wavelength dependences of propagation loss and extinction ratio are also evaluated The free carrier absorption in the proposed modulator is appropriately confirmed by comparing theoretical results with the experimental results of fabricated optical modulators on silicon-on-insulator wafers, however, practical use of the device is limited since the extinction ratio remains small owing to a weak interaction between light and inversion carriers at 1.55-mu m-wavelength light. By theoretical analyses, a large extinction ratio is obtained for possible applications in the deeper infrared regime because free carrier absorption increases with wavelength. A much larger extinction ratio is expected when the interaction between guided waves and surface plasmons occurs.
掲載誌名
Japanese Journal of Appllied Physics
48巻
11号
出版年月日
2009
出版者
Japan Society Applied Physics
ISSN
0021-4922
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
author
権利情報
Copyright (c) 2009 The Japan Society of Applied Physics
関連情報URL
部局名
ナノデバイス・システム研究センター