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ID 25917
本文ファイル
著者
Kohmura, Kazuo
Tanaka, Hirofumi
Seino, Yutaka
Odaira, Toshiyuki
Nishiyama, Fumitaka
Kinoshita, Keizo
Chikaki, Shinichi
キーワード
caesium
chemisorption
electric breakdown
leakage currents
low-k dielectric thin films
permittivity
porous materials
silicon compounds
NDC
電気工学
抄録(英)
A highly cross-linked porous silica dielectric (PoSiO) film was fabricated at a low temperature of 350°C. PoSiO films were derived by sol-gel method and their pore surface silanol groups were silylated with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) by vapor phase treatment. To promote the degree of siloxane cross-linkage of the film, cesium (Cs) was added to the precursor solution with the amount of 0, 5, 15, and 30 wt.-ppm as a catalyst. Then the amount of methyl-silicon-three oxygen (Me-Si T-type) and hydrogen-silicon-three oxygen (H-Si T-type) bridged structures of the chemisorbed TMCTS were increased, and the amount of surface silanol groups was decreased markedly with the increasing amount of Cs concentration. Leakage current and dielectric constant were measured under various humidity conditions, and which were hardly degraded for the highly cross-linked PoSiO owing to its small amount of residual silanol groups and adsorbed water. It was also shown that the amount of mobile protons originated from the silanol groups became negligible. Time zero dielectric breakdown (TZDB) field strength was improved to 6.7 MV/cm and a projected time dependent dielectric breakdown (TDDB) lifetime satisfied 10 years for Cs 30 ppm doped PoSiO under a stress conditions of 220°C and |E| = 1 MV/cm.
掲載誌名
Journal of The Electrochemical Society
155巻
11号
開始ページ
G258
終了ページ
G264
出版年月日
2008
出版者
The Electrochemical Society, Inc.
ISSN
0013-4651
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
author
権利情報
Copyright (c) 2008 The Electrochemical Society
関連情報URL
部局名
ナノデバイス・システム研究センター