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ID 15052
本文ファイル
著者
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
キーワード
Charge pumping
nterface traps
MOSFET
Reliability
NDC
電気工学
抄録(英)
Stress-induced interface trap generation (ΔNit) in the mid-channel region of standard n-channel MOSFETs with ultrathin plasma-nitrided SiO2 films (2.34 and 3.48 nm) were systematically studied under static and dynamic (both bipolar and unipolar) oxide field stresses over a wide frequency range from 1 to 10[7] Hz using a direct-current current-voltage measurement. At the bipolar stresses, ΔNit increases with the stress frequency significantly when the frequency is larger than ∼104 Hz while it saturates or decreases at the frequency larger than ∼107 Hz. The frequency dependence of the ΔNit enhancement can be attributed to a charge pumping current during the dynamic stress. Nitrogen incorporation increases not only ΔNit, but also the frequency dependence.
掲載誌名
IEEE Electron Device Letters
26巻
3号
開始ページ
216
終了ページ
218
出版年月日
2005-03
出版者
IEEE
ISSN
0741-3106
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
関連情報URL
部局名
ナノデバイス・システム研究センター