このエントリーをはてなブックマークに追加
ID 31968
本文ファイル
著者
Arita, Masashi
Utsmi, Yuki
Morimoto, Osamu
Hadano, Yuta
NDC
物理学
内容記述
We have performed a photoemission and inverse photoemission spectroscopic study of a narrow-gap semiconductor FeGa_3, in order to characterize the occupied and unoccupied electronic states. The energy-gap size was found to be ~0.4 eV, and the valence-band maximum (VBM) was located around the A point of the Brillouin zone. We observed a dispersive Ga 4sp derived band near the Fermi level (E_F), and Fe 3d narrow bands located at -0.5 and -1.1 eV away from E_F. In contrast to the case of FeSi, there was no temperature-dependent peak enhancement at the VBM on cooling. The observed density of states and band dispersions were reasonably reproduced by the LDA+U calculation with the on-site effective Coulomb interaction U_<eff> ~3 eV to the Fe 3d states. Present results indicate that, in spite of sizable U_<eff>/W ~0.6 (W: band width), electron correlation effects are not significant in FeGa_3 compared with FeSi since the VBM consists of the dispersive band with the reduced Fe 3d contribution, and the energy gap is large.
掲載誌名
Physical Review B
83巻
24号
開始ページ
245116-1
終了ページ
245116-5
出版年月日
2011-06-22
出版者
The American Physical Society
ISSN
1098-0121
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2011 The American Physical Society
関連情報URL
部局名
理学研究科
先端物質科学研究科
放射光科学研究センター