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ID 19371
本文ファイル
著者
Strocov, Vladimir N.
Claessen, Ralph
Nicolay, Georg
Hüfner, Stefan
Harasawa, Ayumi
Shin, Shik
Kakizaki, Akito
Starnberg, H. I.
Nilsson, P. O.
Blaha, Peter
抄録(英)
A method of band mapping providing full control of the three-dimensional k is described in detail. Angle-dependent very-low-energy electron diffraction is applied to determine the photoemission final states along a Brillouin zone symmetry line parallel to the surface; photoemission out of these states is then utilized to map the valence bands in the constant-final-state mode. The method naturally incorporates the non-free-electron and excited-state self-energy effects in the unoccupied band, resulting in an accuracy superior over conventional techniques. Moreover, its intrinsic accuracy is less limited by lifetime broadening. As a practical advantage, the method provides access to a variety of lines in the Brillouin zone using only one crystal surface. We extensively tested the method on Cu. Several new aspects of the electronic structure of this metal are determined, including non-free-electron behavior of unoccupied bands and missing pieces of the valence band.
掲載誌名
Physical Review B - Condensed Matter and Materials Physics
63巻
20号
開始ページ
205108-1
終了ページ
205108-16
出版年月日
2001-04-27
出版者
American Physical Society
ISSN
0163-1829
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2001 The American Physical Society.
関連情報URL
部局名
理学研究科