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ID 19363
本文ファイル
著者
Rader, Oliver
Pampuch, Carsten
Shikin, Alexander M.
Gudat, Wolfgang
Okabayashi, Jun
Mizokawa, Takashi
Fujimori, Atsushi
Hayashi, Toshiaki
Tanaka, Masaaki
キーワード
manganese compounds
magnetic semiconductors
photoemission
semiconductor epitaxial layers
molecular beam epitaxial growth
valence bands
gallium arsenide
semimagnetic semiconductors
抄録(英)
Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy. On the reprepared p(1 x 1) surface, resonant photoemission of the valence band shows a 20-fold enhancement of the Mn 3d contribution at the L3 edge. The difference spectrum is similar to our previously obtained resonant photoemission at the Mn M edge, in particular a strong satellite appears and no clear Fermi edge ruling out strong Mn 3d weight at the valence-band maximum. The x-ray absorption lineshape differs from previous publications. Our calculation based on a configuration-interaction cluster model reproduces the x-ray absorption and the L3 on-resonance photoemission spectrum for model parameters Δ, Udd, and (pdσ) consistent with our previous work and shows the same spectral shape on and off resonance thus rendering resonant photoemission measured at the L3 edge representative of the Mn 3d contribution. At the same time, the results are more bulk sensitive due to a probing depth about twice as large as for photoemission at the Mn M edge. The confirmation of our previous results obtained at the M edge calls recent photoemission results into question which report the absence of the satellite and good agreement with local-density theory.
掲載誌名
Physical Review B - Condensed Matter and Materials Physics
69巻
7号
開始ページ
075202-1
終了ページ
075202-7
出版年月日
2004-02-06
出版者
American Physical Society
ISSN
0163-1829
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2004 The American Physical Society.
関連情報URL
部局名
理学研究科
先端物質科学研究科