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ID 15361
本文ファイル
著者
Kashihara, Nobuki
Setyawan, Heru
Hayashi, Yutaka
Kim, Chan Soo
Winardi, Sugeng
キーワード
Nanoparticle
Particle generation control
Plasma reactor
Sine-wave modulation
NDC
化学
抄録(英)
Sine-wave modulated rf plasma has been used to control particle generation and growth in a plasma-enhanced chemical vapor deposition of silicon dioxide thin films using TEOS/O2. The density and the size of particles generated in the plasma are greatly reduced when the plasma is modulated with sine-wave modulation at low modulation frequency (<1000 Hz). In addition, particle contamination on the films is significantly reduced also for nanoparticles, and the film growth rates at the range of modulation frequencies where particle generation are greatly reduced do not decrease appreciably. Compared to its counterpart pulse-wave modulation plasma, the sine-wave modulation plasma has demonstrated a better performance in terms of reduction of particle generation and film contamination, and of film growth rate. Thus, the sine-wave modulation plasma has shown as a promising method to be applied in the production of thin film with a high deposition rate and a low particle contamination.
掲載誌名
Journal of Nanoparticle Research
8巻
3-4号
開始ページ
395
終了ページ
403
出版年月日
2006-08
出版者
Springer
ISSN
1388-0764
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
author
権利情報
Copyright (c) 2006 Springer "The original publication is available at www.springerlink.com"
関連情報URL(IsVersionOf)
http://dx.doi.org/10.1007/s11051-005-9005-1
部局名
工学研究科