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ID 15051
本文ファイル
著者
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
キーワード
Dynamic stress
Negative bias temperature instability (NBTI)
pMOSFETs
Recombination
Ultrathin gate oxide
NDC
電気工学
抄録(英)
Negative bias temperature (NBT) instability of p-MOSFETs with ultrathin SiON gate dielectric has been investigated under various gate bias configurations. The NBT-induced interface trap density (ΔNit) under unipolar bias is essentially lower than that under static bias, and is almost independent of the stress frequency up to 10 MHz. On the contrary, ΔNit under bipolar pulsed bias of frequency larger than about 10 kHz is significantly enhanced and exhibits a strong frequency dependence, which has faster generation rate and smaller activation energy as compared to other stress configurations. The degradation enhancement is attributed to the energy to be contributed by the recombination of trapped electrons and free holes upon the silicon surface potential reversal from accumulation to inversion.
掲載誌名
IEEE Electron Device Letters
26巻
6号
開始ページ
387
終了ページ
389
出版年月日
2005-06
ISSN
0741-3106
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
関連情報URL
部局名
ナノデバイス・システム研究センター



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