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ID 29246
file
creator
Hirata, Tomoki
Kajikawa, Kenta
Sunami, Hideo
NDC
Physics
abstract
Light propagation in a metal-oxide-semiconductor optical modulator based on free carrier absorption is analyzed theoretically. The analysis is based on Marcatili's approximation taking account of absorption by free carriers in the inversion layer The gate voltage and wavelength dependences of propagation loss and extinction ratio are also evaluated The free carrier absorption in the proposed modulator is appropriately confirmed by comparing theoretical results with the experimental results of fabricated optical modulators on silicon-on-insulator wafers, however, practical use of the device is limited since the extinction ratio remains small owing to a weak interaction between light and inversion carriers at 1.55-mu m-wavelength light. By theoretical analyses, a large extinction ratio is obtained for possible applications in the deeper infrared regime because free carrier absorption increases with wavelength. A much larger extinction ratio is expected when the interaction between guided waves and surface plasmons occurs.
journal title
Japanese Journal of Appllied Physics
volume
Volume 48
issue
Issue 11
date of issued
2009
publisher
Japan Society Applied Physics
issn
0021-4922
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
author
rights
Copyright (c) 2009 The Japan Society of Applied Physics
relation url
department
Research Center for Nanodevices and Systems