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ID 31999
file
creator
Lee, Kyu Joon
Choo, Sung Min
Saiga, Yuta
Jung, Myung-Hwa
NDC
Physics
abstract
We report the dramatic change of gapless semiconductor properties by different chemical doping elements of Co and Mn into PbPdO_2. The metal-insulatorlike transition temperature T_<MI> = 100 K for PbPdO_2 shifts to a higher temperature of 150 K by the Co doping and to a lower temperature of 70 K by the Mn doping. Because of the anisotropic band structure with the majority of heavy holes and the minority of light electrons, the transport and magnetic properties are significantly changed by the chemical doping elements. At low temperatures, the Co doping enhances ferromagnetic interactions, whereas the Mn doping favors antiferromagnetic interactions. These results are of great interests because you can control the magnetic ordering as well as manipulate the carrier density by changing the doping elements. These materials could be a good candidate for spintronics applications.
journal title
Journal of Applied Physics
volume
Volume 109
issue
Issue 7
start page
07C316-1
end page
07C316-3
date of issued
2011-03-29
publisher
The American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2011 American Institute of Physics
relation url
department
Graduate School of Advanced Sciences of Matter