New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces
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We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept.
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The Electrochemical Society
Copyright (c) 2006 The Electrochemical Society
Graduate School of Advanced Sciences of Matter