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ID 17062
file
creator
Shiraishi, Kenji
Akasaka, Yasushi
Nakaoka, Takashi
Ohmori, Kenji
Ahmet, Parhat
Torii, Kazuyoshi
Watanabe, Heiji
Chikyow, Toyohiro
Nara, Yasuo
Iwai, Hiroshi
Yamada, Keisaku
abstract
We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions of gate metals. Moreover, we discuss the potential of the new high-k dielectrics of La2O3 based on this new concept.
journal title
ECS Transactions
volume
Volume 2
issue
Issue 1
start page
25
end page
40
date of issued
2006
publisher
The Electrochemical Society
ncid
publisher doi
language
eng
nii type
Conference Paper
HU type
Conference Papers
DCMI type
text
format
application/pdf
text version
author
rights
Copyright (c) 2006 The Electrochemical Society
relation url
department
Graduate School of Advanced Sciences of Matter