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ID 19355
file
creator
Okabayashi, Jun
Rader, Oliver
Mizokawa, Takashi
Fujimori, Atsushi
Hayashi, Toshiaki
Tanaka, Masaaki
abstract
Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k?[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
journal title
Physical Review B - Condensed Matter and Materials Physics
volume
Volume 64
issue
Issue 12
start page
125304-1
end page
125304-4
date of issued
2001-09-06
publisher
American Physical Society
issn
0163-1829
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2001 The American Physical Society.
relation url
department
Graduate School of Science