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ID 18595
file
creator
Hansch, Walter
abstract
Core-level intensities for Si 2p, Si2s, O1s, and N1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication.
journal title
Applied Physics Letters
volume
Volume 75
issue
Issue 11
start page
1535
end page
1537
date of issued
1999-09-13
publisher
American Institute of Physics
issn
0003-6951
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 1999 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems