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ID 18593
file
creator
Kawamura, Kensaku
Kidera, Toshiro
abstract
Narrow (>95 nm) and extremely thin (~7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ~5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ~26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties.
journal title
Journal of Applied Physics
volume
Volume 91
issue
Issue 8
start page
5213
end page
5220
date of issued
2002-04-15
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2002 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems