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ID 18602
file
creator
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
abstract
Bulk (well) bias effects (grounded, positively biased, and floating) on both static and dynamic negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics were systematically investigated. The device degradation under both static and dynamic negative bias temperature (NBT) stresses with relatively large gate voltage (Vg) is significantly enhanced by a positive bulk bias (Vb). Moreover, the device degradation under bipolar pulsed bias temperature (BT) stress is dramatically enhanced by floating the bulk electrode. Both phenomena can be attributed to an additional degradation related to hot hole injection. The holes are energized by an electrical field of the induced depletion region between channel and bulk provided by the positive Vb or, in the case of bipolar pulsed BT stress with the bulk electrode floating, by the transient depletion region below the channel induced by the p-n junction between source (drain) and bulk upon the gate voltage Vg being switched from positive to negative with a transition time less than about 0.2-100 ms.
journal title
Journal of Applied Physics
volume
Volume 99
issue
Issue 6
date of issued
2006-05-15
publisher
American Institute of Physics
issn
0021-8979
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2006 American Institute of Physics.
relation url
department
Research Center for Nanodevices and Systems